Sökning: "Metal Oxide Semiconductor Field Effect Transistor"
Visar resultat 1 - 5 av 18 uppsatser innehållade orden Metal Oxide Semiconductor Field Effect Transistor.
1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER
2. Flashlamp Annealing for Improved Ferroelectric Junctions
Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. LÄS MER
3. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. LÄS MER
4. Fabrication and Characterization of Quantum-well Field Effect Transistor
Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. LÄS MER
5. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER