Sökning: "gate-all-around GAA"
Hittade 3 uppsatser innehållade orden gate-all-around GAA.
1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER
2. A Simulation Study of Variability in Gate-all-Around Nanosheet Transistors
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : Gate-all-around (GAA) nanosheet field effect transistors (NSFETs) seem to be one of the most promising replacement options for FinFETs towards scaling down below to the sub-7nm technology nodes. They offer better electrostatics and control of short channel effects (SCEs) due to their superior control over the channel and their large effective channel width. LÄS MER
3. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER