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1. Characterization of epitaxial graphene grown on silicon carbide
Master-uppsats, Karlstads universitet/Institutionen för ingenjörsvetenskap och fysikSammanfattning : In this thesis work several manufacturing methods for graphene is discussed followed by an indepth study of graphene grown by a high temperature sublimation method (sublimation of siliconcarbide). The graphene surfaces studied have been grown by Graphensic AB, both graphenegrown on the Si-face and the C-face of the silicon carbide were studied. LÄS MER
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