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1. 1. Characterization of InSb quantum dots in InAs matrix grown by molecular beam epitaxy for infrared photodetectors

   Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

   Författare :Laiq§ Hussain; [2011]
   Nyckelord :;

   Sammanfattning : Materials for the generation and detection of long wavelength IR radiation continue to be of considerable interest for many applications such as night vision, defense and security, rescue, life sciences, industrial processing etc. For this purpose photodetection based on InSb is a well known technology in mid wavelength (3-5 μm) range. LÄS MER