Sökning: "FTJ"

Visar resultat 1 - 5 av 8 uppsatser innehållade ordet FTJ.

  1. 1. Ru and RuO2 as bottom electrodes for HZO based FTJ’s

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Emil Gränsmark; [2023]
    Nyckelord :Technology and Engineering;

    Sammanfattning : Vår hjärna löser beräkningar som tar oss genom livet otroligt energieffektivt; den kör hela dagen runt på ungefär 12 watt. Jämför man med en vanlig dator som kräver ungefär 175 watt så är det inte ens nära[2]. Att uppnå hjärnans energieffektivitet är ett ambitiöst mål för dagens elektronik. LÄS MER

  3. 2. Evaluation of Ferroelectric Tunnel Junction memristor for in-memory computation in real world use cases

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Alec Guerin; Christos Papadopoulos; [2023]
    Nyckelord :FTJ; Ferroelectric Tunneling Junction; Analog in-memory computing; AIMC; Memristor; A.I.; AIHWKIT; Semantic segmentation; Natural Language Processing; NLP; Neuromorphic Computing; Matrix Vector Multiplication; Technology and Engineering;

    Sammanfattning : Machine learning algorithms are experiencing unprecedented attention, but their inherent computational complexity leads to high energy consumption. However, a paradigm shift in computing methods has the potential to address the issue. LÄS MER

  4. 3. Flashlamp Annealing for Improved Ferroelectric Junctions

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Theodor Blom; [2023]
    Nyckelord :Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Sammanfattning : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. LÄS MER

  5. 4. Semiconducting TiO2 for High Performance Ferroelectric Tunnel Junctions

    M1-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Erik Wikare; [2022]
    Nyckelord :Technology and Engineering;

    Sammanfattning : The ferroelectric tunnel junction FTJ is a rather old concept but has recently been in the spotlight for its promising properties in computer memory technology and neuromorphic computing. The device consists of a ferroelectric insulator sandwiched between two electrodes, and by polarisation switching the resistance along the heterostructure can drastically be adjusted. LÄS MER

  7. 5. Use of Stochastic Switching in the Training of Binarized Neural Networks

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Svante Åkesson; [2022]
    Nyckelord :Machine Learning BNN Binarized Neural Network Deep Learning Convolutional Batchnormalization Stochastic Switching Training Gradient Accumulation Undo Binary Weights Memristor FTJ Hardware; Technology and Engineering;

    Sammanfattning : Most prior research into the field of Binarized Neural Networks (BNNs) has been motivated by a desire to optimize Deep Learning computations on traditional hardware. These methods rely on bit-wise operations to drastically decrease computation time, however to address the resulting loss in accuracy it is common practice to reintroduce continuous parameters and train using batch normalization. LÄS MER