Sökning: "Gate Resistance"

Visar resultat 1 - 5 av 19 uppsatser innehållade orden Gate Resistance.

  1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Ivan Krsic; [2023]
    Nyckelord :HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

    Sammanfattning : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. LÄS MER

  3. 2. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Agnimitra Saha; [2023]
    Nyckelord :Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

    Sammanfattning : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. LÄS MER

  4. 3. Superconducting gates for InP HEMTs

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Sebastian Alveteg; [2023]
    Nyckelord :Cryogenic electronics; HEMT; Superconductors; Applied Physics; Kryogenisk elektronik; HEMT; Supraledare; Tillämpad fysik;

    Sammanfattning : The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryogenic Low Noise Amplifiers (LNAs), which have increasedin demand as quantum computing is scaling up. LÄS MER

  5. 4. JÄMFÖRELSE AV KLIMATPÅVERKANFÖR GLASULL OCH POLYURETAN : MPARISON OF CLIMATE IMPACT FOR GLASS WOOL AND POYURETHANE

    Uppsats för yrkesexamina på grundnivå, Örebro universitet/Institutionen för naturvetenskap och teknik

    Författare :Kaleb Abraham; Andreas Lust; [2023]
    Nyckelord :: Climate impact; Climate declaration; LCA; EPD; GWP; CO2e; glass wool; polyurethane; Klimatpåverkan; Klimatdeklaration; LCA; EPD; GWP; CO2e; glasull; polyuretan;

    Sammanfattning : This study examines the climate impact of the thermal insulation materials, glass wool and polyurethane. Two wall constructions with a size of one square meter are used in the study to compare their carbon footprints and determine which material has the lowest environmental impact. For the walls to be comparable, they need to have the same U-value. LÄS MER

  7. 5. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Wilhelm Holmberg; [2023]
    Nyckelord :High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

    Sammanfattning : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. LÄS MER