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  1. 1. Ferroelectricity in nanocrystalline Hf0.5Zr0.5O2 thin films

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Lun Sang; [2018]
    Nyckelord :ferroelectricity; Hf0.5Zr0.5O2; GIXRD; XRR; Technology and Engineering; Physics and Astronomy;

    Sammanfattning : Hafnium dioxide (HfO_2) based thin films doped with various dopants (Si, Ge, Al, Gd, Sr, Zr) have been found to exhibit ferroelectricity. These dopants were found to stabilize the III orthorhombic phase in the hafnium oxide based thin films. LÄS MER