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1. 1. Development of Ferroelectric Hafnium Oxide for Negative Capacitance Field Effect Transistors

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Robin Atle; [2019]
   Nyckelord :Un-doped ferroelectricity; HfO2; Hafnium oxide; ALD; Atomic Layer Deposition; Hysteresis; P-E; polarization; Technology and Engineering;

   Sammanfattning : With the transistor being the workhorse in modern electronics it has been vastly improved since its invention. However, the previous go-to improvement method of scaling it down has reached a dead end. Power dissipation has become a large concern and is in need of a solution. LÄS MER