Sökning: "Atomic Layer Deposition"

Visar resultat 1 - 5 av 28 uppsatser innehållade orden Atomic Layer Deposition.

  1. 1. A comparative study of ZnO i-layer deposited with ALD and PVD for CIGS solar cells

    Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/Fasta tillståndets elektronik

    Författare :Joel Johansson Byberg; [2019]
    Nyckelord :CIGS; ZnO; ZnMgO; solar cells; thin film; zinc oxide; window layer; ALD; PVD;

    Sammanfattning : Two identified setbacks for CIGS based devices in order to obtain higher efficiency are parasitic absorption in the window layer structure and losses in open-circuit voltage due to bad interfaces. This study investigated how the performance of the solar cell is affected by depositing intrinsic ZnO (i-ZnO) and ZnMgO with atomic layer deposition (ALD) instead of the conventional sputtering. LÄS MER

  2. 2. Development of Ferroelectric Hafnium Oxide for Negative Capacitance Field Effect Transistors

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Robin Atle; [2019]
    Nyckelord :Un-doped ferroelectricity; HfO2; Hafnium oxide; ALD; Atomic Layer Deposition; Hysteresis; P-E; polarization; Technology and Engineering;

    Sammanfattning : With the transistor being the workhorse in modern electronics it has been vastly improved since its invention. However, the previous go-to improvement method of scaling it down has reached a dead end. Power dissipation has become a large concern and is in need of a solution. LÄS MER

  3. 3. Silicon surface passivation via ultra-thin SiO2, TiO2, and Al2O3 layers

    Uppsats för yrkesexamina på avancerad nivå, Luleå tekniska universitet/Institutionen för teknikvetenskap och matematik

    Författare :Anton Ek; [2019]
    Nyckelord :surface passivation; ALD; silicon; solar cell; SiO2; Al2O3; TiO2; stacks; characterization; optimization; RSM; temperature;

    Sammanfattning : Energy traps at the silicon surface originating from discontinuities in the lattice is detrimental to the performance of solar cells. Acting as recombination centers, they offer a location where the charge carriers may easily return to their original energy band after excitation. LÄS MER

  4. 4. Study of ohmic contact formation on AlGaN/GaN heterostructures

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Kai-Hsin Wen; [2019]
    Nyckelord :ohmic contacts; wide bandgap; Ta-based; recess etch; N-vacancies;

    Sammanfattning : It is challenging to achieve low-resistive ohmic contacts to III-nitride semiconductors due to their wide bandgap. A common way to reduce the contact resistance is to recess the ohmic area prior to metallization. LÄS MER

  5. 5. Manipulation of thin metal film growth on weakly-interacting substrates using gaseous surfactants

    Master-uppsats, Linköpings universitet/Nanodesign

    Författare :Martin Konpan; [2019]
    Nyckelord :Surface physics; material science;

    Sammanfattning : Thin films are structures with thicknesses ranging from the atomic scale to the mesoscale that are used to alter the properties of a surface and/or serve as functional layers in devices. Thin metal films deposited from the vapor phase on weakly-interacting substrates, including oxides (TiO2, ZnO, SiO2 etc. LÄS MER