Sökning: "Characterisation of a MOSFET"

Hittade 3 uppsatser innehållade orden Characterisation of a MOSFET.

  1. 1. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Sofie Johannesson; Sebastian Skog; [2022]
    Nyckelord :Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

    Sammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER

  3. 2. Fabrication and Charaterisation of Finger Gates

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Daniel Svedbrand; [2017]
    Nyckelord :Transistor; MOSFET; NWFET; Nanowire; Finger gate; HSQ; InAs; InGaAs; III-V-material; buffer-layer; CV-characterisation; CV-measurements; Physics and Astronomy; Technology and Engineering;

    Sammanfattning : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. LÄS MER

  4. 3. Fabrication and characterisation of a novel MOSFET gas sensor

    Uppsats för yrkesexamina på grundnivå, Institutionen för systemteknik

    Författare :Johan Dalin; [2002]
    Nyckelord :Technology; MOSFET gas sensor; Wolkenstein Model; CMOS integration; TEKNIKVETENSKAP;

    Sammanfattning : A novel MOSFET gas sensor for the investigation has been developed. Its configuration resembles a"normally on"n-type thin-film transistor (TFT) with a gas sensitive metal oxide as a channel. The device used in the experiments only differs from common TFTs in the gate configuration. LÄS MER