Sökning: "indium antimonide"

Hittade 5 uppsatser innehållade orden indium antimonide.

  1. 1. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study

    Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Shengpeng Huang; [2023]
    Nyckelord :indium antimonide; surface reconstructions; bismuth deposition; scanning tunneling microscopy; X-ray photoelectron spectroscopy.; Physics and Astronomy;

    Sammanfattning : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. LÄS MER

  3. 2. Chemical Mechanical Polishing of InSb

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :David Linehan; [2021]
    Nyckelord :CMP; InSb; Chemical Mechanical Polishing; Indium; Antimonide; AFM; Profilometer; Ultrasonic; PVA; Smooth; Rough; Etch; Planarization; Technology and Engineering;

    Sammanfattning : .... LÄS MER

  4. 3. Establishing simulations of shockwaves in InSb using molecular dynamics

    Master-uppsats, Lunds universitet/Atomfysik; Lunds universitet/Fysiska institutionen

    Författare :Erik Löfquist; [2021]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : Laser induced shockwaves have previously been shown to prompt structural changes in germanium. Similar experiments have now been performed in InSb, with powder diffraction patterns displaying a peak at 2.3Å indicating the formation of an unknown structure. LÄS MER

  5. 4. Modelling Rapid Melt Growth of III-V Integration on Si

    Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Zahra Baneen; [2017]
    Nyckelord :Semiconductors; Rapid Melt Growth; Parameters; nucleation; growth velocity; cooling rate; Physics and Astronomy;

    Sammanfattning : High quality III-V semiconductors on silicon substrate can make for significant progress in gate electrostatics and optoelectronic devices. Indium antimonide with its inviting properties can play a key role to further facilitate devise integration. LÄS MER

  7. 5. Epitaxial growth of Sn seeds and Sn-seeded InSb nanowires on InSb substrates

    Kandidat-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Louise Laurenius; [2015]
    Nyckelord :nanoparticles; MOVPE; InSb nanowires; Technology and Engineering;

    Sammanfattning : During the last decades, researchers have done extensive research on one-dimensional structures because of their promising properties for a broad range of applications. However, there are a few factors slowing down the process of integrating these nanowires in commercial products. To overcome this, new material combinations are being explored. LÄS MER