Sökning: "InAs nanowires"

Visar resultat 1 - 5 av 29 uppsatser innehållade orden InAs nanowires.

1. 1. Optical Communication using Nanowires and Molecular Memory Systems

   Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Synkrotronljusfysik

   Författare :Thomas Kjellberg Jensen; [2024]
   Nyckelord :neuromorphic computing; nanowire; molecular dye; DASA photoswitch; OBIC; Physics and Astronomy;

   Sammanfattning : Neuromorphic computational networks, inspired by biological neural networks, provide a possible way of lowering computational energy cost, while at the same time allowing for much more sophisticated devices capable of real-time inferences and learning. Since simulating artificial neural networks on conventional computers is particularly inefficient, the development of neuromorphic devices is strongly motivated as the reliance on AI-models increases. LÄS MER

3. 2. Developing an Ar milling process to improve the contact quality to InAs nanowires

   Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Författare :Chris Mkolongo; [2023]
   Nyckelord :InAs nanowires; Argon milling; Technology and Engineering;

   Sammanfattning : The aim of this work was to develop a stable and reproducible argon milling process for InAs nanowires to remove the native oxide layer that increases electrical resistance. This was done by identifying a few milling parameters and studying them in relation to the milling rate of silicon dioxide (SiO2). LÄS MER

4. 3. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

   Master-uppsats, Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

   Författare :Björn Landeke-Wilsmark; [2022]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. LÄS MER

5. 4. Thermoelectric measurements on InAs nanowires with a ratchet-barrier

   Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Författare :Hanna Lundström; [2022]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : Efficient extraction of thermal energy from electrons at the micro- and nanoscale is a long-standing scientific goal that could enable novel types of heat engines, heat management, and solar cell applications. Semiconductor nanowires are a promising system for investigating such devices for several reasons, such as their thermoelectric properties, and the potential to be grown in heterostructures with high flexibility. LÄS MER

7. 5. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Sofie Johannesson; Sebastian Skog; [2022]
   Nyckelord :Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

   Sammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER