Sökning: "dv dt och di dt transienter"

Hittade 1 uppsats innehållade orden dv dt och di dt transienter.

  1. 1. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Elochukwu Mbah; [2023]
    Nyckelord :Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

    Sammanfattning : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. LÄS MER