Sökning: "Gate Inductance"
Hittade 5 uppsatser innehållade orden Gate Inductance.
1. Superconducting gates for InP HEMTs
Master-uppsats, KTH/Tillämpad fysikSammanfattning : The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryogenic Low Noise Amplifiers (LNAs), which have increasedin demand as quantum computing is scaling up. LÄS MER
2. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. LÄS MER
3. Hardware in Loop Simulations of Electric Drives
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : Electric drives are crucial components of powertrain of modern vehicles. They need to be controlled effectively to deliver a comfortable and efficient driving experience. The control unit needs to be robust to handle extreme operating conditions and faults in a safe manner. LÄS MER
4. Modeling of IGBT Modules with Parasitics Elements Evaluation
Magister-uppsats, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE)Sammanfattning : The goal of this report is the development of a PSpice based modeling platform for the evaluation of power IGBT modules to be used in HVDC and FACTS applications. The use of simulation tools is of great value in the process of developing new power electronic devices and new converter topologies. LÄS MER
5. Current Distribution in High RF Power Transistors
Magister-uppsats, Ämnesavdelningen för elektronikSammanfattning : To obtain the power levels required from high RF power transistors, the size of the chip has often to be made so large that inductance of electrical connections inside the package cannot be neglected. This may have the effect that various parts of the transistor chip are not connected exactly parallel, i.e. LÄS MER