Sökning: "Double Pulse Test"

Visar resultat 1 - 5 av 7 uppsatser innehållade orden Double Pulse Test.

  1. 1. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Elochukwu Mbah; [2023]
    Nyckelord :Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

    Sammanfattning : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. LÄS MER

  3. 2. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :André Xavier Svensson; [2022]
    Nyckelord :Switching power losses; Metal Oxide Semiconductor Field Effect Transistor; Silicon carbide; Synchronous Buck converter; Wide Band Gap; Double Pulse Test; Efficiency; Temperature; Växlande effektförluster; Fälteffekttransistor; Kiselkarbid; Synchronous Buck omvandlare; Wide Band Gap; Double Pulse Test; Verkningsgrad; Temperatur;

    Sammanfattning : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. LÄS MER

  4. 3. Gate driver solutions for high power density SMPS using Silicon Carbide MOSFETs

    Master-uppsats, Mittuniversitetet/Institutionen för elektronikkonstruktion

    Författare :Farhan Akram; [2021]
    Nyckelord :SiC MOSFETs; Gate drivers; DC-DC converter; High power and efficiency power supplies;

    Sammanfattning : Discrete silicon carbide (SiC) power devices have unique characteristics that outpace those of silicon (Si) counterparts. The improved physical features have provided better faster switching, greater current densities, lower on-resistance, and temperature performances. LÄS MER

  5. 4. High voltage transient protection for automotive

    Uppsats för yrkesexamina på avancerad nivå, Mittuniversitetet/Institutionen för elektronikkonstruktion

    Författare :Viktor Lindholm; [2019]
    Nyckelord :Automotive; protection circuit; Load dump; pulse 1; pulse 2a; ISO 16750; ISO 7637; voltage transients; double exponential transient; pulse generator.;

    Sammanfattning : Electronics for automotive needs to be able to handle different situations that can occur on the power line, such as high voltage transients. ISO16750 and ISO-7637 describes different pulses and tests a system needs to be able to handle. LÄS MER

  7. 5. Dietärt intag av nitrat ger signifikanta förbättringar i prestation under två timmar cykeltest

    Kandidat-uppsats, Linnéuniversitetet/Institutionen för kemi och biomedicin (KOB)

    Författare :Linnea Sixtensson; [2016]
    Nyckelord :Nitrat; nitrit; kväveoxid; prestation; mitokondrie; muskulär effektivitet; vasodilatation; oxidativ fosforylering;

    Sammanfattning : Bakgrund. De senaste årtiondena har betydelsen av nitrat, nitrit och kväveoxid (NO) ikroppen blivit känd. LÄS MER