Sökning: "high speed amplifier"

Visar resultat 1 - 5 av 24 uppsatser innehållade orden high speed amplifier.

  1. 1. Digital Front End Algorithms for Sub-Band Full Duplex

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Midhat Rizvi; Khaled Al-Khateeb; [2023]
    Nyckelord :Adjacent Channel Leakage Ratio; Bit Error Rate; Clipping and Filtering; Crest Factor Reduction; Digital front end; Digital Pre-Distortion Error Vector Magnitude; Frequency Division Duplex; Power Amplifier; Peak to Average Power Ratio; Peak Cancellation Crest Factor Reduction; Sub Band Full Duplex; Self-Interference Cancellation; Signal-to-Interference Noise Ratio; Signal-to-Noise Ratio; Turbo Clipping; Time Division Duplex; Technology and Engineering;

    Sammanfattning : Sub-band full duplex is a new communication scheme technology, where a single frequency band is partitioned into sub-bands for downlink (DL) and up-link(UL) transmissions, and both can take place simultaneously. The idea behind the sub-band full duplex development is to improve the throughput, and coverage and reduce the latency of the UL communication by allowing the UL reception during the DL transmission. LÄS MER

  3. 2. Photoluminescence Mapping of Erbium Doped Lithium Niobate

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Chuanshi Xie; [2023]
    Nyckelord :Automotive mapping; Erbium emitters; Ion implantation; Lithium niobate on insulator; photoluminescence microscopy; Automatisk kartläggning; Erbium fotonemitterare; Jonimplantation; Litiumniobat på isolator; fotoluminiscensmikroskopi.;

    Sammanfattning : Lithium niobate (LiNbO3) is a human-made crystalline which is widely used in modern photonics due to its useful properties. In recent years, there has been significant progress in the development of lithium niobate on insulator (LNOI) technology, realizing a fully functional photonic integrated circuits, thanks to its capabilities in both electro-optics and second-order optical nonlinearity. LÄS MER

  4. 3. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Rungeng Xu; [2022]
    Nyckelord :E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

    Sammanfattning : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. LÄS MER

  5. 4. Configurable, scalable single-ended sense amplifier with additional auxiliary blocks for low-power two-port memories in advanced FinFET technologies

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Limitha Subbaiah Kumar Nangaru; [2022]
    Nyckelord :CMOS Complementary Metal Oxide Semiconductors ; DRC Design Rule Check ; Process Corners; FinFET Fin Field Effect Transistor ; IC Integrated Circuit ; LVS Layout Versus Schematic ; Monte Carlo; Nominal Voltage; PDK Process Design Kit ; Power Delay Product; Read Bit Line; Read Word Line; SoC System on Chip ; SRAM Static Random Access Memory ; Threshold Voltage; Technology and Engineering;

    Sammanfattning : System on Chip (SoC) designs contain a variety of Intellectual Property (IP) cores, including digital signal processing blocks, media and graphics processing units, as well as processing core units that employ multiple-port memories to enhance performance and bandwidth. These memories allow parallel read/write operations from the same memory blocks from different ports. LÄS MER

  7. 5. A design of a 100 MS/s, 8-bit Pipelined ADC in CMOS

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Shen Zhang; [2021]
    Nyckelord :Technology and Engineering;

    Sammanfattning : The thesis focuses on designing and simulating an 8-bit high-speed fully differential pipelined Analog to Digital Converter (ADC) in the 65nm Complementary Metal-Oxide-Semiconductor (CMOS) technology by using the software Cadence Virtuoso. The aim is to increase the operation speed of the ADC for communication systems without reducing the performance, in the meantime, the low power consumption and the low complexity should also be required when considering future implementation. LÄS MER