Sökning: "transistor characterization"

Visar resultat 1 - 5 av 18 uppsatser innehållade orden transistor characterization.

  1. 1. Flashlamp Annealing for Improved Ferroelectric Junctions

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Theodor Blom; [2023]
    Nyckelord :Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Sammanfattning : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. LÄS MER

  3. 2. Fabrication and Characterization of Quantum-well Field Effect Transistor

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Yang Fu; [2022]
    Nyckelord :quantum-well field-effect transistor; InGaAs; subthreshold swing; sheet resistance; contact resistance; electron mobility; Post Metallization Annealing; electrostatic control; Physics and Astronomy;

    Sammanfattning : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. LÄS MER

  4. 3. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Sofie Johannesson; Sebastian Skog; [2022]
    Nyckelord :Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

    Sammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER

  5. 4. Investigations of p-type quantum dots in GaSb nanowires

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :In-Pyo Yeo; [2021]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : The purpose of this project is to investigate hole transport in p-type quantum dots formed in GaSb nanowire and operating as single hole transistors. The individual and controlled hole-spin confinement in such system yields a variety of proposed applications for spintronics or quantum computation. LÄS MER

  7. 5. Characterizing optical and electrical properties of monolayer MoS2 by backside absorbing layer microscopy

    Master-uppsats, Uppsala universitet/Institutionen för fysik och astronomi

    Författare :Nathan Ullberg; [2020]
    Nyckelord :backside absorbing layer microscopy; BALM; monolayer MoS2; TMD; TMDC; 2D materials; nanomaterials; nanotechnology; refractive index; extinction coefficient; absorption coefficient; field-effect transistor; FET; semiconductors; optoelectronics; optics; raw image processing; chemical vapor deposition; CVD; in situ characterization;

    Sammanfattning : Nanomaterials are playing an increasing role in novel technologies, and it is important to develop optical methods to characterize them in situ.  To that end, backside absorbing layer microscopy (BALM) has emerged as a powerful tool, being capable to resolve sub-nanometer height profiles, with video-rate acquisition speeds and a suitable geometry to couple live experiments. LÄS MER