Sökning: "Zincblende"

Visar resultat 1 - 5 av 7 uppsatser innehållade ordet Zincblende.

1. 1. In-situ Growth of Sn-seeded GaAs and GaSb Nanowire Heterostructures

   Master-uppsats, Lunds universitet/Centrum för analys och syntes

   Författare :Azemina Kraina; [2023]
   Nyckelord :nanowire; heterostructure; ETEM; MOCVD; TEM; in-situ; Sn; GaAs; GaSb; materials chemistry; Technology and Engineering; Chemistry;

   Sammanfattning : One of the ways to utilize III-V nanowires, is to make use of the possibility to combine materials and create heterostructures which allows for creating material combinations with new properties. A special interest can be taken into Sb-containing nanowires due to the high electron mobility, however there has been reported difficulties with switching to other materials because of a 'memory effect' where Sb lingers in the system and nanowire. LÄS MER

3. 2. Time-resolved x-ray diffraction study of longitudinal optical phonons in zincblende semiconductors

   Master-uppsats, Lunds universitet/Atomfysik; Lunds universitet/Fysiska institutionen

   Författare :Lassi Linnala; [2022]
   Nyckelord :femtosecond THz radiation; ultrafast x-ray diffraction; pump-probe; longitudinal optical phonons; zincblende semiconductors; anharmonic decay; density functional perturbation theory; Physics and Astronomy;

   Sammanfattning : Anharmonic decay of longitudinal optical (LO) phonons in zincblende semiconductors is not at present well characterized due to the polar and many-body nature of the problem. Femtosecond THz radiation offers a novel route to this study, as the interaction of this radiation is directly with the phonon lattice and these THz excited phonons do not have enough energy to excite electrons over the band gap. LÄS MER

4. 3. Interfaces in complex InAs-GaSb heterostructured nanowires - A transmission electron microscopy study

   Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Louise Uhrgård Gren; [2017]
   Nyckelord :transmission electron microscope; TEM; aberration corrected S TEM; nanowires; core-shell nanowires; InAs-GaSb; advanced characterization; Technology and Engineering;

   Sammanfattning : In this project epitaxially grown InAs-GaSb complex heterostructured nanowires have been characterized by means of aberration corrected TEM techniques and energy dispersive X-ray spectroscopy (EDX). The InAs-GaSb material is of interest due to its high charge carrier mobility, which has possible applications in electronic devices such as FETs. LÄS MER

5. 4. High resolution imaging of GaAs nanowires

   Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Synkrotronljusfysik

   Författare :Andreas Johansson; [2015]
   Nyckelord :Scanning Tunneling Microscopy; STM; Nanowire; Gallium Arsenide; GaAs; Semiconductor; Atomic structure; Morphology; Nanoelectronics; Heterostructure; Physics and Astronomy;

   Sammanfattning : Semiconductor nanowires (NWs) are expected to be the new building blocks in electronics and photonics, but improved understanding of the nanowire surfaces and electronic properties are required to realize it. In this bachelor thesis, wurtzite (Wz)-zincblende (Zb) axial heterostructure GaAs nanowires are studied using scanning tunneling microscopy and spectroscopy. LÄS MER

7. 5. Nanowire-based InP solar cell materials

   Magister-uppsats, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE)

   Författare :Damian Saj; Izabela Saj; [2012]
   Nyckelord :nanowire; indium phophide; solar cell; photodetector; electronics; FTIR; semiconductor technology;

   Sammanfattning : In this project, a new type of InP solar cell was investigated. The main idea is that light is converted to electrical current in p-i-n photodiodes formed in thin InP semiconductor nanowires epitaxially grown on an InP substrate. Two different types of samples were investigated. LÄS MER