Sökning: "läckströmmen"

Hittade 4 uppsatser innehållade ordet läckströmmen.

  1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Ivan Krsic; [2023]
    Nyckelord :HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

    Sammanfattning : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. LÄS MER

  3. 2. Energy harvesting för sensorer i tung industriell miljö

    Uppsats för yrkesexamina på grundnivå, Umeå universitet/Institutionen för tillämpad fysik och elektronik

    Författare :Elias Tångås; [2023]
    Nyckelord :;

    Sammanfattning : Energy harvesting essentially involves extracting energy from processes that generate losses in theform of heat, vibrations, radiation, etc, and converting it into electrical energy that can be used topower sensors or other electrical systems. A customer of Knightec Örnsköldsvik wants to develop measurement equipment using sensors in a demanding industrial environment with rotating machines that does not allow wired energy or communication transfer. LÄS MER

  4. 3. Investigation of Gallium Nitirde High Electron Mobility Transistors

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Shikhar Arvind; [2021]
    Nyckelord :Gallium Nitride; High electron mobility transistor; leakage current; in-situ Silicon Nitride; power electronics;

    Sammanfattning : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. LÄS MER

  5. 4. Leakage current and breakdown of HfO2/InGaAs MOS capacitors

    Kandidat-uppsats, Lunds universitet/Fysiska institutionen

    Författare :Edvin Winqvist; [2015]
    Nyckelord :breakdown; leakage; ingaas; hfo2; Physics and Astronomy;

    Sammanfattning : With the constant downscaling of transistors, silicon as a production material is falling out of favour because of increasing power consumption when the size of devices becomes smaller. Compound materials from group III-V in the table of elements are promising candidates to replace silicon. LÄS MER