Sökning: "drain leakage current"

Visar resultat 1 - 5 av 8 uppsatser innehållade orden drain leakage current.

1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Ivan Krsic; [2023]
   Nyckelord :HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

   Sammanfattning : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. LÄS MER

3. 2. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Hithiksha Krishna Murthy; [2022]
   Nyckelord :Gallium nitrate; High Mobility Electron Transistor; Silicon carbide; Silicon; Sapphire; substrates; power electronics;

   Sammanfattning : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. LÄS MER

4. 3. Investigation of Gallium Nitirde High Electron Mobility Transistors

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Shikhar Arvind; [2021]
   Nyckelord :Gallium Nitride; High electron mobility transistor; leakage current; in-situ Silicon Nitride; power electronics;

   Sammanfattning : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. LÄS MER

5. 4. Development of Ferroelectric Hafnium Oxide for Negative Capacitance Field Effect Transistors

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Robin Atle; [2019]
   Nyckelord :Un-doped ferroelectricity; HfO2; Hafnium oxide; ALD; Atomic Layer Deposition; Hysteresis; P-E; polarization; Technology and Engineering;

   Sammanfattning : With the transistor being the workhorse in modern electronics it has been vastly improved since its invention. However, the previous go-to improvement method of scaling it down has reached a dead end. Power dissipation has become a large concern and is in need of a solution. LÄS MER

7. 5. High voltage transient protection for automotive

   Uppsats för yrkesexamina på avancerad nivå, Mittuniversitetet/Institutionen för elektronikkonstruktion

   Författare :Viktor Lindholm; [2019]
   Nyckelord :Automotive; protection circuit; Load dump; pulse 1; pulse 2a; ISO 16750; ISO 7637; voltage transients; double exponential transient; pulse generator.;

   Sammanfattning : Electronics for automotive needs to be able to handle different situations that can occur on the power line, such as high voltage transients. ISO16750 and ISO-7637 describes different pulses and tests a system needs to be able to handle. LÄS MER