Sökning: "mocvd"

Visar resultat 6 - 9 av 9 uppsatser innehållade ordet mocvd.

  1. 6. Understanding Sn-seeded InSb nanowire growth

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Hengfang Zhang; [2017]
    Nyckelord :Science General;

    Sammanfattning : III-Sb semiconductor nanowires have drawn a lot of attention because of their many promising applications, such as thermoelectric generation, low power high efficient electronics and quantum transport. Gold as a catalyst seed particle has been dominating for many years assisting nanowires growth. LÄS MER

  3. 7. Development of Epitaxial Lift-Off to form GaAs nanowire array membranes

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Erik Svensson; [2016]
    Nyckelord :MOVPE; MOCVD; AlGaAs; 111 B; Epitaxy; ELO; Epitaxial Lift-Off; Technology and Engineering;

    Sammanfattning : Epitaxial lift-off-layers (ELO) were developed in order to create nanowire array membranes, with the intent to pave the way for solar cells in tandem. Ultimately this thesis project focused only on growing and characterizing the ELO layers on (111)B oriented GaAs substrates with MOCVD, as this process step is not thoroughly understood in literature. LÄS MER

  4. 8. Spin-dependent Recombination in GaNAs

    Master-uppsats, Institutionen för fysik, kemi och biologi; Funktionella elektroniska material

    Författare :Yuttapoom Puttisong; [2009]
    Nyckelord :GaNAs; spin filter; spin dependent recpmbination; defect;

    Sammanfattning : Spin filtering properties of novel GaNAs alloys are reported in this thesis. Spin-dependent recombination (SDR) in GaNAs via a deep paramagnetic defect center is intensively studied. LÄS MER

  5. 9. Characterization of AlGaN HEMT structures

    Uppsats för yrkesexamina på grundnivå, Institutionen för fysik, kemi och biologi

    Författare :Anders Lundskog; [2007]
    Nyckelord :HEMT; Hot-Wall MOCVD; GaN; AlGaN; AlN exclusionlayer; Double heterojunction; 1D Poisson-Schrödinger;

    Sammanfattning : During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. LÄS MER