Sökning: "Gallium-Arsenide"

Visar resultat 11 - 15 av 20 uppsatser innehållade ordet Gallium-Arsenide.

  1. 11. High resolution imaging of GaAs nanowires

    Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Synkrotronljusfysik

    Författare :Andreas Johansson; [2015]
    Nyckelord :Scanning Tunneling Microscopy; STM; Nanowire; Gallium Arsenide; GaAs; Semiconductor; Atomic structure; Morphology; Nanoelectronics; Heterostructure; Physics and Astronomy;

    Sammanfattning : Semiconductor nanowires (NWs) are expected to be the new building blocks in electronics and photonics, but improved understanding of the nanowire surfaces and electronic properties are required to realize it. In this bachelor thesis, wurtzite (Wz)-zincblende (Zb) axial heterostructure GaAs nanowires are studied using scanning tunneling microscopy and spectroscopy. LÄS MER

  3. 12. Should we point them away from the sun? -A study in PV spectral tracking in a Scandinavian climate

    Master-uppsats, Lunds universitet/Avdelningen för Energi och byggnadsdesign

    Författare :Petter Stefansson; [2015]
    Nyckelord :PV spectral response.; radiative transfer model; spectral mismatch factor; spectral irradiance; Solar tracking; Technology and Engineering;

    Sammanfattning : Conventional photovoltaic solar tracking is commonly done by aligning the surface normal of a PV module with the direction from which direct solar irradiation is coming from. While this tracking design has proven to perform well in sunny climates, solar tracking is altogether less common in northern climates where the direct solar irradiance is weaker. LÄS MER

  4. 13. Hall Measurement on Regrown Nanowires

    Master-uppsats, Lunds universitet/Fysiska institutionen

    Författare :Sudhakar Sivakumar; [2015]
    Nyckelord :Hall measurement; InGaAs; III-V semiconductor; ballistic; transport properties; mobility; sheet carrier concentration; Physics and Astronomy;

    Sammanfattning : Ternary semiconductor alloys like $In_xGa_{1-x}As$ have lured competing attention in connection to sub-50 nm high performance, low power, planar Complementary Metal Oxide Semiconductor technology. This compound semiconductor owes its popularity to excellent bulk carrier mobility, minority carrier diffusion constant, small bandgap, high electron injection velocity and its capability to take Moore's law beyond silicon platform. LÄS MER

  5. 14. Multipoint spectroscopic analyzing & imaging method

    Master-uppsats, Avdelningen för elektronik, matematik och naturvetenskap

    Författare :Provakar Paul; [2013]
    Nyckelord :;

    Sammanfattning : Spectroscopy is a technique as the interaction of different radiation spectrum with matter to analysis of a sample. This thesis work proposed two methods are multiple pointes spectroscopies analyzing then imaging detection methods for solid samples. Developed method one is using Ultraviolet (UV), Visible (Vis) and Infrared (IR) detection. LÄS MER

  7. 15. Evaluation of charge carrier concentration in particle assisted, Sn doped GaAs nanowires

    Master-uppsats, Halvledarmaterial; Tekniska högskolan

    Författare :Mårtensson Niklas; [2013]
    Nyckelord :Nanowires; GaAs; Hall Effect; Resistivity; Doping; Carrier Concentration; Processing; Characterization; LED;

    Sammanfattning : The doping concentration and resistivity of tin doped Gallium arsenide nanowires (GaAs NWs) have been investigated using Hall effect-, 4-probe-, transmission line-, and field effect measurements. Single nanowires were contacted using electron beam lithography followed by thermal evaporation of Au/Ti (900/100 Å). LÄS MER