Sökning: "Nanosheet field effect transistors"

Hittade 2 uppsatser innehållade orden Nanosheet field effect transistors.

1. 1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Hanyu Liu; Xi Chen; [2023]
   Nyckelord :nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

   Sammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER

3. 2. A Simulation Study of Variability in Gate-all-Around Nanosheet Transistors

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Virinchi Tirumaladass; [2022]
   Nyckelord :Gate-all-around; Nanosheet field effect transistors; process variations; variability; TCAD; Gate-all-around; Nanoblad fälteffekttransistorer; processvariationer; variabilitet; TCAD;

   Sammanfattning : Gate-all-around (GAA) nanosheet field effect transistors (NSFETs) seem to be one of the most promising replacement options for FinFETs towards scaling down below to the sub-7nm technology nodes. They offer better electrostatics and control of short channel effects (SCEs) due to their superior control over the channel and their large effective channel width. LÄS MER