Sökning: "Sotirios Maslougkas"

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  1. 1. Gate oxide characterization of 4H-SiC MOS capacitors : A study of the effects of electrical stress on the flat-band voltage of n-type substrate 4H-SiC MOS capacitors

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Sotirios Maslougkas; [2021]
    Nyckelord :Silicon carbide; Gate oxide; Oxide characterization; MOS devices; Semiconductor- insulator interface; Kiselkarbid; Gate-oxid; Oxidkarakterisering; MOS-teknologi; halvledar-isolatorgränssnitt;

    Sammanfattning : Silicon is the main material used in electronics. The evolution of power electronics and the need for more power efficient semiconductor devices led silicon to its limits. Silicon carbide is a promising material for electronic applications with a wide band-gap, high critical electric field, high thermal conductivity and saturation velocity. LÄS MER