Sökning: "Gate oxide"

Visar resultat 1 - 5 av 30 uppsatser innehållade orden Gate oxide.

1. 1. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Agnimitra Saha; [2023]
   Nyckelord :Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

   Sammanfattning : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. LÄS MER

3. 2. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Hanyu Liu; Xi Chen; [2023]
   Nyckelord :nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

   Sammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER

4. 3. Assessing Sweden's future prospect for domestic hydrogen production based on lifecycle assessment

   Master-uppsats, KTH/Hållbar utveckling, miljövetenskap och teknik

   Författare :Fredrik Tannoury; [2022]
   Nyckelord :Technology Readiness Level; Hydrogen production; LCA; Sweden;

   Sammanfattning : Humanity faces challenge to satisfy its growing energy demand while simultaneously transitioning into a sustainable society. Reducing carbon emissions from the industrial and transportation sector are met with difficulties. To help decarbonisation efforts EU members like Sweden have recognised the use of hydrogen as a viable solution. LÄS MER

5. 4. Fabrication and Characterization of Quantum-well Field Effect Transistor

   Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Yang Fu; [2022]
   Nyckelord :quantum-well field-effect transistor; InGaAs; subthreshold swing; sheet resistance; contact resistance; electron mobility; Post Metallization Annealing; electrostatic control; Physics and Astronomy;

   Sammanfattning : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. LÄS MER

7. 5. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Sofie Johannesson; Sebastian Skog; [2022]
   Nyckelord :Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

   Sammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER