Sökning: "Atomic Layer Etching"

Hittade 5 uppsatser innehållade orden Atomic Layer Etching.

1. 1. Real- and Quasi-Atomic Layer Etching for Ultra-High Resolution Patterning

   Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Yoana Ilarionova; [2023]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : An attempt was made at developing atomic layer etching from a cyclic etching process in an ICP-RIE tool. During the process OES was used for contamination monitoring and estimation of the relative amount of Cl2 left in the chamber during the etch step of cyclic etching processes. LÄS MER

3. 2. Damage Analysis of Reactive Ion and Atomic Layer Etched Silicon

   Magister-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Mohammad Al Abrash; [2023]
   Nyckelord :Technology and Engineering;

   Sammanfattning : Dry etching is one of the most important methods of pattern transfer in nanofabrication. There are many dry etching methods, the most commonly used is reactive ion etching (RIE), that is based on a continuous supply of reactive ions and radicals generated in a radio-frequency (RF) plasma discharge. LÄS MER

4. 3. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

   Master-uppsats, Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

   Författare :Björn Landeke-Wilsmark; [2022]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. LÄS MER

5. 4. Study of ohmic contact formation on AlGaN/GaN heterostructures

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Kai-Hsin Wen; [2019]
   Nyckelord :ohmic contacts; wide bandgap; Ta-based; recess etch; N-vacancies;

   Sammanfattning : It is challenging to achieve low-resistive ohmic contacts to III-nitride semiconductors due to their wide bandgap. A common way to reduce the contact resistance is to recess the ohmic area prior to metallization. LÄS MER

7. 5. Evaluation of Atomic Layer Etching Possibility at Lund Nano Lab

   Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Md Sabbir Ahmed Khan; [2016]
   Nyckelord :Atomic Layer Etching; Nanoimprint lithography; Nanowires; Physics and Astronomy;

   Sammanfattning : In modern electronics, device downscaling demands atomic precision control and Atomic Layer Etching (ALE) can provide this prime capability with minute device damage. ALE, also known as layer-by-layer etching, is a technique of removing atomically thin layers from the surface of materials in a controlled way. LÄS MER