Sökning: "antimonide"
Visar resultat 1 - 5 av 10 uppsatser innehållade ordet antimonide.
1. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study
Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenSammanfattning : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. LÄS MER
2. Chemical Mechanical Polishing of InSb
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : .... LÄS MER
3. Establishing simulations of shockwaves in InSb using molecular dynamics
Master-uppsats, Lunds universitet/Atomfysik; Lunds universitet/Fysiska institutionenSammanfattning : Laser induced shockwaves have previously been shown to prompt structural changes in germanium. Similar experiments have now been performed in InSb, with powder diffraction patterns displaying a peak at 2.3Å indicating the formation of an unknown structure. LÄS MER
4. Influence of strain and point defects on the Seebeck coefficient of thermoelectric CoSb3 : Inverkan av töjnings och punktdefekter på Seebeck-koefficienten för termoelektrisk CoSb3
Master-uppsats, Malmö universitet/Fakulteten för teknik och samhälle (TS)Sammanfattning : Many studies and experiments have been conducted over the years to find solutions to the electricity problem. This issue is not just related to how fossil fuels are dispensed. Also, the environmental concerns associated with using fossil fuels have become a severe issue, which is a major cause of environmental pollution and ozone layer damage. LÄS MER
5. GaSb nanowire transistors with process induced strain
Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/FörbränningsfysikSammanfattning : With the constant downscaling of Si transistors reaching its limits, other alternatives have been actively researched the past decades. Group III-V semiconductors are excellent materials with generally high carrier mobilities that can replace Si in transistors. LÄS MER