Sökning: "breakdown voltage"
Visar resultat 21 - 25 av 37 uppsatser innehållade orden breakdown voltage.
21. Characterization of single InP Nanowire-based Avalanche Photodetectors
Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysikSammanfattning : Nanoscience is an emerging field of technology where the bottom-up fabrication techniques are utilized instead of the traditional top-down approaches for enhancing the performance of di erent optoelectronic devices. One such material is a semicon- ductor nanowire (NW) which holds immense potential in nanophotonic applications, such as solar cells, LEDs, lasers, sensors and photodetectors. LÄS MER
22. Vertical heterostructure III-V nanowire MOSFETs
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : If cars had developed as fast as processors they would go at 470,000 mph, get 100,000 miles to the gallon, and cost 3 cents" claims Paul Ottelini, Intel CEO 2005-2013. This serves as a reminder of how fast the field of nanoelectronics is developing due to constant demand for faster and more energy efficient integrated circuits. LÄS MER
23. Kartläggning av faktorer som kan minska antalet återinkopplingar i elnätet
Kandidat-uppsats, Högskolan Väst/Avd för automationssystemSammanfattning : Vattenfall Eldistribution AB distribuerar el till ca 900 000 kunder i Sverige. Det handlar om både privatkunder och företagskunder. Enheten Nätdrift vars driftcentral är placerad i Trollhättan har till uppgift att se till att elnätet är spänningssatt och att man skall minimera avbrottstiderna. LÄS MER
24. Leakage current and breakdown of HfO2/InGaAs MOS capacitors
Kandidat-uppsats, Lunds universitet/Fysiska institutionenSammanfattning : With the constant downscaling of transistors, silicon as a production material is falling out of favour because of increasing power consumption when the size of devices becomes smaller. Compound materials from group III-V in the table of elements are promising candidates to replace silicon. LÄS MER
25. Current voltage characterization of high-k oxide on InGaAs substrate
Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysikSammanfattning : Abstract Metal oxide semiconductor (MOS) capacitor was fabricated on the InGaAs substrate with Al2O3/HfO2 gate oxide. InGaAs is one of the promising candidates for advanced applications which require the lower power supply and high frequency. LÄS MER