Sökning: "breakdown voltage"
Visar resultat 6 - 10 av 37 uppsatser innehållade orden breakdown voltage.
6. Micro- / Meso- Scale Dielectric Strength Testing of Fibre Composites
Uppsats för yrkesexamina på avancerad nivå, Umeå universitet/Institutionen för fysikSammanfattning : Glass fibre composites are common materials used in high voltage applications as insulating materials that provide good structural integrity. The aim of this thesis is to develop a method of studying the failure in such materials by measuring the dielectric strength on micro- and meso- scale samples, consisting of single fibre filaments and fibre bundles respectively embedded in epoxy resin. LÄS MER
7. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. LÄS MER
8. Insulation diagnostics of stator bars
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : Insulation in rotating machines is a common cause for failure. Therefore, research in the area is large and is important to further increase the knowledge of the phenomena related to insulation degradation. LÄS MER
9. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. LÄS MER
10. Investigation of Gallium Nitirde High Electron Mobility Transistors
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. LÄS MER