Sökning: "epitaxy"

Visar resultat 6 - 10 av 37 uppsatser innehållade ordet epitaxy.

  1. 6. Aerotaxy-grown GaAs nanowires using Ga seed particles

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Eric Ceccarelli; [2021]
    Nyckelord :Aerotaxy; GaAs nanowires; epitaxy; self-catalized growth; self-seeded growth; Ga seeded GaAs nanowires; Ga seeded GaP nanowires; Technology and Engineering;

    Sammanfattning : Aerotaxy offers an alternative method for the manufacturing of semiconductor nanowires. Instead of seeding growth on an expensive substrate, aerosol seed particles act as the catalyst for the Vapor–Liquid–Solid growth in a hot flow through reactor. LÄS MER

  3. 7. AlP sacrificial layer for GaP NW growth

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Patrick Flatt; [2020]
    Nyckelord :Nanowire; Substrate Reuse; Sacrificial Layer; Epitaxy; Wafer; MOVPE; Etching; GaP; AlP; SiN; Au; SEM; Physics and Astronomy;

    Sammanfattning : III-V semiconductor nanowires (NWs) display outstanding potential for many technological applications, but their implementation into devices is restricted due to high material and fabrication costs. Common techniques for NW synthesis rely on single crystalline substrates, which are single-use and have large costs associated to them. LÄS MER

  4. 8. Properties of epitaxial lateral overgrowth of GaAsP and GaAs grown by hydride vapor phase epitaxy

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Lakshman Srinivasan; [2020]
    Nyckelord :GaAsP; ELOG; HVPE; Photoluminescence; Raman;

    Sammanfattning : Direct heteroepitaxy of III-Vs on silicon (Si) has always been a challenge and there are various strategies to integrate these materials. This thesis deals with one such strategy known as Epitaxial lateral overgrowth (ELOG) which is extensively supported by experiments. LÄS MER

  5. 9. Properties of III-V/Si heterojunction fabricated by HVPE

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Prakhar Bhargava; [2020]
    Nyckelord :;

    Sammanfattning : Silicon is a promising material and is used for a wide range of applications in the electronics industry because of the high quality surface passivation given by the native oxide layer SiO2e. However, Si is not an ideal candidate for optoelectronic applications due to its indirect bandgap of 1. LÄS MER

  7. 10. Passivation of Gallium Arsenide Nanowires for Solar Cells

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Austin Irish; [2019]
    Nyckelord :nanowires; semiconductors; solar cells; photovoltaics; passivation; electronics; chemistry; polymers; hydrazine; plasma; gallium; arsenic; iii-v; epitaxy; photoluminescence; time-resolved; spectroscopy; Physics and Astronomy;

    Sammanfattning : A strategic and diverse set of passivation methods for gallium arsenide nanowires wasstudied. Using a time-resolved photoluminescence setup at100 Kand300 K, the radiativerecombination of charge carriers was resolved on a picosecond time scale. LÄS MER