Sökning: "epitaxy"

Visar resultat 16 - 20 av 37 uppsatser innehållade ordet epitaxy.

  1. 16. Fabrication and characterization of gate last Si MOSFETs with SiGe source and drain

    Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Författare :Björn Christensen; [2017]
    Nyckelord :MOSFET fabrication; gate last; SiGe source and drain; IDP gate; epitaxy; MOSFET fabrication; gate last; SiGe source and drain; IDP gate; epitaxy;

    Sammanfattning : The continuous evolution of digital technology we enjoy today is the result of ever shrinking, faster and cheaper transistors that make up the ubiquitous integrated circuits of our devices. Over the decades, the industry has gone from purely geometrical scaling to innovative solutions like high-k dielectrics combined with metal gates and FinFETs. LÄS MER

  3. 17. Epitaxial growth and processing of high-aspect ratio InGaAs fins for advanced MOSFETs

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Andreas Malmgren; [2017]
    Nyckelord :FinFET; metalorganic vapor phase epitaxy; reciprocal space mapping; Technology and Engineering; Physics and Astronomy;

    Sammanfattning : In this thesis, InGaAs fins with vertical sidewalls consisting of {110} facets were epitaxially grown on InP(111)B substrates using metalorganic vapor phase epitaxy. A lithography patterned hydrogen silsesquixane growth mask was used to promote the formation of vertical {110} facets during the growth. LÄS MER

  4. 18. Electrical characterization of strained InP-Ga(x)In(1-x)As core-shell nanowires

    Magister-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Lorenz Frevel; [2016]
    Nyckelord :nanowire; strain; piezoelectric effect; indium phosphide; InP; gallium indium arsenide; GaInAs; InGaAs; core-shell; radial heterostructure; Physics and Astronomy;

    Sammanfattning : This project report attempts to measure the piezoelectric effect in strained core-shell nanowires. The core material is wurtzite indium phosphide (InP) and the shell material wurtzite gallium indium arsenide (Ga(x)In(1-x)As). LÄS MER

  5. 19. Development of Epitaxial Lift-Off to form GaAs nanowire array membranes

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Erik Svensson; [2016]
    Nyckelord :MOVPE; MOCVD; AlGaAs; 111 B; Epitaxy; ELO; Epitaxial Lift-Off; Technology and Engineering;

    Sammanfattning : Epitaxial lift-off-layers (ELO) were developed in order to create nanowire array membranes, with the intent to pave the way for solar cells in tandem. Ultimately this thesis project focused only on growing and characterizing the ELO layers on (111)B oriented GaAs substrates with MOCVD, as this process step is not thoroughly understood in literature. LÄS MER

  7. 20. Properties of III-V semiconductor materials grown by HVPE

    Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Författare :Stamoulis Stergiakis; [2016]
    Nyckelord :;

    Sammanfattning : This thesis focuses on the characterization of lll-V semiconductor materials by using Scanning Electron Microscopy equipped with Energy Dispersive Spectroscopy (SEM-EDS), High Resolution X-ray Diffraction (HRXRD), Atomic Force Microscopy (AFM) and Photoluminescence (PL). In XRD characterization, the rocking curve measurement was conducted to evaluate the composition of III-V semiconductor alloys and the Reciprocal Lattice Mapping (RLM) revealed the detailed structural properties of heteroepitaxial III-V semiconductors. LÄS MER