Sökning: "gallium indium arsenide"

Visar resultat 1 - 5 av 10 uppsatser innehållade orden gallium indium arsenide.

  1. 1. Nanowire based mm-wave LNA and switch design

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Andreas Grenmyr; [2020]
    Nyckelord :LNA mm-wave RF switch nanowire MOSFET; Technology and Engineering;

    Sammanfattning : In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. LÄS MER

  3. 2. Polymer Assisted Transfer of Graphene onto Semiconductor Substrates

    Kandidat-uppsats, Lunds universitet/Förbränningsfysik; Lunds universitet/Synkrotronljusfysik

    Författare :Jonathan Frisby; [2020]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : Since first being isolated in 2004, Graphene has been researched heavily because of its unique properties. Recently, interest has grown in graphene/semiconductor heterostructures. In this work, the transfer of graphene through the use of cellulose acetate butyrate (CAB) polymer is studied. LÄS MER

  4. 3. I-V and Optical Characterization of InP/InAsP Quantum Disc-in-Nanowire Infrared Photodetectors

    Magister-uppsats, Högskolan i Halmstad/Akademin för informationsteknologi

    Författare :Divya Raval; [2019]
    Nyckelord :Nanowires; Infrared photodetectors; Quantum disc; Photocurrent;

    Sammanfattning : Photodetectors are semiconductor devices capable of converting optical signals into electrical signals. There is a wide range of applications for photodetectors such as fiber optics communication, infrared heat camera sensors, as well as in medical and military equipment. LÄS MER

  5. 4. Using gallium nitride nanowires as STM probes

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Karolis Sulinskas; [2018]
    Nyckelord :STM; STS; Nanowire; GaN; InAs; Semiconductors; Physics and Astronomy;

    Sammanfattning : Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. LÄS MER

  7. 5. Electrical characterization of strained InP-Ga(x)In(1-x)As core-shell nanowires

    Magister-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Lorenz Frevel; [2016]
    Nyckelord :nanowire; strain; piezoelectric effect; indium phosphide; InP; gallium indium arsenide; GaInAs; InGaAs; core-shell; radial heterostructure; Physics and Astronomy;

    Sammanfattning : This project report attempts to measure the piezoelectric effect in strained core-shell nanowires. The core material is wurtzite indium phosphide (InP) and the shell material wurtzite gallium indium arsenide (Ga(x)In(1-x)As). LÄS MER