Nanowire based mm-wave LNA and switch design

Sammanfattning: In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. The topology has consisted of a common source as a first stage, and a cascode as a second stage. The design and simulations of the design have been performed in National Instruments (NI) AWR. The results from the simulations of the 5G LNA show a noise figure less than of 2.6 dB for a bandwidth of 16.4 GHz from 103.6 to 120.0 GHz with a peak gain of 24.5 dB. For the satellite LNA, the noise figure is less than 2.8 dB and the gain is more than 21.8 dB for the full uplink E-band from 81 to 86 GHz, and achieves a total 3-dB bandwidth of 8 GHz, with a peak gain of 23.2 dB. The transmitter to receiver isolation of the switch is more than 22 dB and the insertion loss less than 2.2 dB from 97.5 to 120.0 GHz.