Sökning: "transistor"

Visar resultat 41 - 45 av 196 uppsatser innehållade ordet transistor.

1. 41. Design and implementation of testable fault-tolerant RISC-V system

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Mattias Rodan; [2020]
   Nyckelord :Testable; MBIST; Fault-tolerant; ECC; RISC-V; Technology and Engineering;

   Sammanfattning : This thesis aims to investigate and implement a fault-tolerant energy-efficient RISC-V based system on chip (SoC). Key features of the SoC is the testabil- ity and reliability of the low power on-chip embedded memories. LÄS MER

3. 42. Ring amplifiers for high speed pipeline assisted SAR ADCs

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Johan Holmstedt; [2020]
   Nyckelord :ADC SAR RAMP ring amp residue amplifier PVT; Technology and Engineering;

   Sammanfattning : This thesis contains a review of published ring amplifier topologies. It is suggested to split the input stage of the ring amplifier into two. In this way, a robust ring amplifier can be designed without stacking the transistors in the second stage of the ring amplifier, boosting its speed properties. LÄS MER

4. 43. Polymer Assisted Transfer of Graphene onto Semiconductor Substrates

   Kandidat-uppsats, Lunds universitet/Förbränningsfysik; Lunds universitet/Synkrotronljusfysik

   Författare :Jonathan Frisby; [2020]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : Since first being isolated in 2004, Graphene has been researched heavily because of its unique properties. Recently, interest has grown in graphene/semiconductor heterostructures. In this work, the transfer of graphene through the use of cellulose acetate butyrate (CAB) polymer is studied. LÄS MER

5. 44. Characterization of GaNbased HEMTs for power electronics

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Xiaomin Liang; [2020]
   Nyckelord :Gallium nitride; high electron mobility transistor; gate designs; power electronics;

   Sammanfattning : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. LÄS MER

7. 45. Elevated temperature tests of SiC experiment for MIST : KTH Student Satellite MIST

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Rasmus Ahlbäck; [2020]
   Nyckelord :Silicon carbide; SiC; transistor; student satellite; temperature; Kiselkarbid; SiC; transistor; studentsatellit; temperatur;

   Sammanfattning : Electronics today rely heavily on silicon transistors which are unsuitable for extreme environments where temperatures potentially could reach up to 500◦C. Materials other than silicon has been proposed to solve this problem, one of which is silicon carbide. LÄS MER