Sökning: "transistor"

Visar resultat 26 - 30 av 196 uppsatser innehållade ordet transistor.

  1. 26. Niobium Ohmic Contacts for Cryogenic Indium Phosphide High-Electron-Mobility Transistors

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Linnéa Bendrot; [2022]
    Nyckelord :Ohmic contacts; high-electron-mobility transistor; InP; Nb films; cryogenic electronics; low-noise amplifier; quantum computing; transfer length method; superconductivity; contact barrier resistance; Ohmska kontakter; högelektronmobilitetstransistorer; indiumfosfid; niob; tunnfilm; kryogen elektronik; lågbrusförstärkare; kvantdatorer; Transfer Length-metod; supraledning; kontakt- barriärresistans;

    Sammanfattning : Ohmic contacts are crucial components in semiconductor devices such as transistors and diodes, and lowering their contact resistance is an important factor in device performance enhancement. This is especially important for low-noise amplifiers (LNAs) where device noise temperature decreases both directly and indirectly with decreasing contact resistance. LÄS MER

  3. 27. Configurable, scalable single-ended sense amplifier with additional auxiliary blocks for low-power two-port memories in advanced FinFET technologies

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Limitha Subbaiah Kumar Nangaru; [2022]
    Nyckelord :CMOS Complementary Metal Oxide Semiconductors ; DRC Design Rule Check ; Process Corners; FinFET Fin Field Effect Transistor ; IC Integrated Circuit ; LVS Layout Versus Schematic ; Monte Carlo; Nominal Voltage; PDK Process Design Kit ; Power Delay Product; Read Bit Line; Read Word Line; SoC System on Chip ; SRAM Static Random Access Memory ; Threshold Voltage; Technology and Engineering;

    Sammanfattning : System on Chip (SoC) designs contain a variety of Intellectual Property (IP) cores, including digital signal processing blocks, media and graphics processing units, as well as processing core units that employ multiple-port memories to enhance performance and bandwidth. These memories allow parallel read/write operations from the same memory blocks from different ports. LÄS MER

  4. 28. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Rishi Balasubramanian Saraswathy; [2022]
    Nyckelord :Super–Junction; DMOSFET; 4H-SiC; Silicon Carbide; Wide bandgap; 6.5 kV; 10 kV; On-state resistance; Breakdown voltage; Super–Junction; DMOSFET; 4H-SiC; kiselkarbid; bredbandgap; 6.5 kV; 10 kV; framspänningsfall; spärrspänning;

    Sammanfattning : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. LÄS MER

  5. 29. Quantum Simulation of Quantum Effects in Sub-10-nm Transistor Technologies

    Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/Materialteori

    Författare :Anders Winka; [2022]
    Nyckelord :Transistor Modeling; Quantum Transport; QTBM; Block Cyclic Reduction; Quantum Computing; Quantum Annealer;

    Sammanfattning : In this master thesis, a 2D device simulator run on a hybrid classical-quantum computer was developed. The simulator was developed to treat statistical quantum effects such as quantum tunneling and quantum confinement in nanoscale transistors. LÄS MER

  7. 30. Synchrotrons as a Source for Soft X-Ray Lithography

    Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Thomas Joseph Grandsaert Jr; [2021]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : To move to lower modes in extreme ultra-violet lithography (EUVL) technology (and keep up with Moore’s law), new sources of soft X-ray radiation must be developed. It is clear from previous studies that Free Electron Lasers (FELs) can easily meet the in-band power requirements at these lower wavelength modes, however detailed studies for insertion devices (undulators) as a soft X-ray lithography (SXL) source are due for a re-evaluation. LÄS MER