Sökning: "högelektronmobilitetstransistorer"

Hittade 2 uppsatser innehållade ordet högelektronmobilitetstransistorer.

  1. 1. Niobium Ohmic Contacts for Cryogenic Indium Phosphide High-Electron-Mobility Transistors

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Linnéa Bendrot; [2022]
    Nyckelord :Ohmic contacts; high-electron-mobility transistor; InP; Nb films; cryogenic electronics; low-noise amplifier; quantum computing; transfer length method; superconductivity; contact barrier resistance; Ohmska kontakter; högelektronmobilitetstransistorer; indiumfosfid; niob; tunnfilm; kryogen elektronik; lågbrusförstärkare; kvantdatorer; Transfer Length-metod; supraledning; kontakt- barriärresistans;

    Sammanfattning : Ohmic contacts are crucial components in semiconductor devices such as transistors and diodes, and lowering their contact resistance is an important factor in device performance enhancement. This is especially important for low-noise amplifiers (LNAs) where device noise temperature decreases both directly and indirectly with decreasing contact resistance. LÄS MER

  3. 2. Characterization of GaNbased HEMTs for power electronics

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Xiaomin Liang; [2020]
    Nyckelord :Gallium nitride; high electron mobility transistor; gate designs; power electronics;

    Sammanfattning : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. LÄS MER