Sökning: "Scanning Tunneling Spectroscopy"

Visar resultat 1 - 5 av 19 uppsatser innehållade orden Scanning Tunneling Spectroscopy.

  1. 1. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study

    Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Shengpeng Huang; [2023]
    Nyckelord :indium antimonide; surface reconstructions; bismuth deposition; scanning tunneling microscopy; X-ray photoelectron spectroscopy.; Physics and Astronomy;

    Sammanfattning : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. LÄS MER

  3. 2. Ultra-Thin Ag Films on the Sn/Si(111)-√3×√3 Surface Studied by STM

    Master-uppsats, Karlstads universitet/Institutionen för ingenjörsvetenskap och fysik (from 2013)

    Författare :Rasmus Lavén; [2018]
    Nyckelord :Silver; Silicon; Tin; Metal-semiconductor interfaces; Thin metal films; Scanning tunneling microscopy; Quantum size effects;

    Sammanfattning : The growth of atomically flat silver films on Si(111) usually requires a two-step growth, including deposition at low temperature (≈100 K) followed by slowly annealing to room temperature. In addition, flat silver films are usually only obtained on Si(111) for film thicknesses larger than the critical thickness of 6 monolayer. LÄS MER

  4. 3. Using gallium nitride nanowires as STM probes

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Karolis Sulinskas; [2018]
    Nyckelord :STM; STS; Nanowire; GaN; InAs; Semiconductors; Physics and Astronomy;

    Sammanfattning : Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. LÄS MER

  5. 4. InAs and high-k oxides, a scanning tunnelling study of their interfaces

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Mattias Åstrand; [2018]
    Nyckelord :Semiconductor; High-k; Atomic layer deposition; Scanning tunnelling microscopy; Scanning tunnelling spectroscopy; Physics and Astronomy;

    Sammanfattning : In order for semiconductor materials to be suitable for implementation in new and progressive devices they have to be of better electronic characteristics than currently used materials, and maintain these once treated and put into action. It is important to verify that bulk characteristics are not hindered at the surface when a given semiconductor is put in contact with another material due to necessity. LÄS MER

  7. 5. GaN-nanowire as probe for scanning tunneling microscopy

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Saber Samadi; [2017]
    Nyckelord :Scanning tunneling microscopy; Scanning tunneling spectroscopy; Nanowires; Galium Nitride; Physics and Astronomy;

    Sammanfattning : Scanning tunneling microscope (STM) has in recent years been one of the most used microscopy approaches in surface science. The STM probe allows for the investigation of atomic resolution electrical properties of a material, these probes are usually of metallic characters. LÄS MER