Sökning: "High-k"

Visar resultat 1 - 5 av 16 uppsatser innehållade ordet High-k.

  1. 1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Hanyu Liu; Xi Chen; [2023]
    Nyckelord :nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

    Sammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER

  3. 2. Investigating and Fabricating High-K (Al2O3) and Ferroelectric (HfO2) MIM-Capacitors for use in BEOL Fabrication Applications

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Thomas Hackett; [2021]
    Nyckelord :atomic layer deposition ALD ; ferroelectric; metal-insulator-metal MIM capacitors; low thermal budget; rapid thermal annealing RTA ;

    Sammanfattning : Integration of high-K Metal-Insulator-Metal (MIM) capacitors in the Back-end-of-line (BEOL) is a topic of interest for the further development of the process at KTH Royal Institute of Technology. MIM-capacitors benefit from having constant capacitance values over a range of voltages and/or frequencies. LÄS MER

  4. 3. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Azal Alothmani; [2018]
    Nyckelord :Nanowire transistor; 1-D MOSFET; RF performance; permittivity; parasitic capacitance; HSQ; COMSOL Multiphysics; Technology and Engineering;

    Sammanfattning : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. LÄS MER

  5. 4. InAs and high-k oxides, a scanning tunnelling study of their interfaces

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Mattias Åstrand; [2018]
    Nyckelord :Semiconductor; High-k; Atomic layer deposition; Scanning tunnelling microscopy; Scanning tunnelling spectroscopy; Physics and Astronomy;

    Sammanfattning : In order for semiconductor materials to be suitable for implementation in new and progressive devices they have to be of better electronic characteristics than currently used materials, and maintain these once treated and put into action. It is important to verify that bulk characteristics are not hindered at the surface when a given semiconductor is put in contact with another material due to necessity. LÄS MER

  7. 5. Low-Frequency Noise in InGaAs Nanowire MOSFETs

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Christian Mario Möhle; [2017]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : Low-frequency (LF) noise (1/f as well as random telegraph-signal (RTS) noise) measurements were performed on high-performance InGaAs nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs). 1/f noise measurements at room temperature (RT) show that the dominant noise mechanism is carrier number fluctuations. LÄS MER