Inductively-Coupled Plasma Etching for Nanoimprint Si-masters

Detta är en Master-uppsats från Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

Sammanfattning: In the last decades, engineers have been pushing semiconductor technology towards fabricating ever smaller devices, and will eventually pass the lower limit of currently commonplace optical lithographic techniques. New techniques have been developed, such as nanoimprint lithography. Stamp fabrication is the key for nanoimprint, and stamps often need to be bought from an external company. In this thesis work, a simple method for stamp fabrication utilising Inductively Coupled Plasma Reactive Ion Etching on samples with Electron Beam Lithography defined patterns in an electron beam sensitive resist, using fluorine based etch chemistry in a Single-step Reactive Ion Etch process, has been developed, allowing for in-house stamp fabrication at Lund Nano Lab using a reactive ion etching process. A process for increasing etch selectivity, called selective infiltration synthesis, was also investigated as a means to improve the fabrication process. This work enables nanoimprint lithography to be a more readily available, and thus more widely used, patterning technique for various research projects within Lund Nano Lab.

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