Sökning: "Fowler-Nordheim"

Hittade 3 uppsatser innehållade ordet Fowler-Nordheim.

  1. 1. Investigation of charge injection at electrode-dielectric interface relevant for HVDC cables : Simulation of charge injection and transport dynamics in electrical insulation for HVDC cables

    Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/Tillämpad mekanik

    Författare :Mohammed Mosa; [2023]
    Nyckelord :BCT model; charge injection; space charge density; electric field distribution; Fowler-Nordheim; Richardson-Schottky;

    Sammanfattning : A bipolar charge transport (BCT) model is used to simulate charge injection and transportdynamics inside insulation material which are used in a high voltage direct current (HVDC)cable. Gaining knowledge about space charge density and electric field distribution in theinsulation material enables minimising charge injection at the metal-insulator interface andavoiding unnecessary energy loss. LÄS MER

  3. 2. Development of Ferroelectric Hafnium Oxide for Negative Capacitance Field Effect Transistors

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Robin Atle; [2019]
    Nyckelord :Un-doped ferroelectricity; HfO2; Hafnium oxide; ALD; Atomic Layer Deposition; Hysteresis; P-E; polarization; Technology and Engineering;

    Sammanfattning : With the transistor being the workhorse in modern electronics it has been vastly improved since its invention. However, the previous go-to improvement method of scaling it down has reached a dead end. Power dissipation has become a large concern and is in need of a solution. LÄS MER

  4. 3. Leakage current and breakdown of HfO2/InGaAs MOS capacitors

    Kandidat-uppsats, Lunds universitet/Fysiska institutionen

    Författare :Edvin Winqvist; [2015]
    Nyckelord :breakdown; leakage; ingaas; hfo2; Physics and Astronomy;

    Sammanfattning : With the constant downscaling of transistors, silicon as a production material is falling out of favour because of increasing power consumption when the size of devices becomes smaller. Compound materials from group III-V in the table of elements are promising candidates to replace silicon. LÄS MER