Sökning: "III-V halvledare"

Visar resultat 6 - 10 av 12 uppsatser innehållade orden III-V halvledare.

1. 6. Properties of III-V/Si heterojunction fabricated by HVPE

   Master-uppsats, KTH/Tillämpad fysik

   Författare :Prakhar Bhargava; [2020]
   Nyckelord :;

   Sammanfattning : Silicon is a promising material and is used for a wide range of applications in the electronics industry because of the high quality surface passivation given by the native oxide layer SiO2e. However, Si is not an ideal candidate for optoelectronic applications due to its indirect bandgap of 1. LÄS MER

3. 7. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Azal Alothmani; [2018]
   Nyckelord :Nanowire transistor; 1-D MOSFET; RF performance; permittivity; parasitic capacitance; HSQ; COMSOL Multiphysics; Technology and Engineering;

   Sammanfattning : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. LÄS MER

4. 8. Growth of InAsSb and GaAsSb Nanowires

   Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Robin Sjökvist; [2018]
   Nyckelord :Nanowire; Crystal Growth; Growth; MOVPE; TEM; SEM; Semiconductor; Materials Science; Physics; Technology and Engineering;

   Sammanfattning : Att kunna ändra egenskaperna hos nanotrådar till specifika applikationer är viktigt om nanotrådar ska kunna inkorporeras i elektronikindustrin. Bandgapet är en sådan egenskap som för ternära III-V halvledare kan ändras om "ordning" uppstår i materialet. LÄS MER

5. 9. InAs MOS capacitors;Fabrication & Characterization

   Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Författare :Felix Vennberg; [2016]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : The down scaling of metal-oxide-semiconductor based devices has been halted by the shortcomings of silicon. To enable further miniaturization new materials are required. The proposed replacements include compound III-V semiconductors and high-k oxides, the implementation of which has been difficult. LÄS MER

7. 10. STM-based characterization of single GaInP photovoltaic nanowires

   Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Johannes Brask; [2016]
   Nyckelord :STM top contact method GaInP nanowire array solar cell; Physics and Astronomy;

   Sammanfattning : The I-V and photovoltaic properties of III-V semiconducting GaInP nanowires have been studied using a scanning tunneling microscope (STM) in evaluation for usage as a potential "sub cell" in a nanowire based tandem solar cell configuration. This evaluation required precise I-V characterization and photo response measurements of individual nanowires. LÄS MER