Sökning: "hafnium dioxide"

Hittade 4 uppsatser innehållade orden hafnium dioxide.

  1. 1. Structural analysis of HZO thin film and electrode using X-ray diffraction

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Elliot Winsnes; [2024]
    Nyckelord :HZO; hafnia; hafnium dioxide; zirconium dioxide; ferroelectricity; ferroelectric; synchrotron radiation; X-ray diffraction; Physics and Astronomy;

    Sammanfattning : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. LÄS MER

  3. 2. Metal-Organic Frameworks for Carbon Dioxide Capture : Using Sustainable Synthesis Routes

    Master-uppsats, Uppsala universitet/Institutionen för materialvetenskap

    Författare :Dhruva Deole; [2022]
    Nyckelord :Metal-Organic Frameworks; Metal-Organic Frameworks for Carbon Dioxide Capture; Sustainable Synthesis; 3D Printing of Metal-Organic Frameworks; Nanomaterials; Nanoporous Materials; Nanotechnology and Functional Materials;

    Sammanfattning : Globally the combustion of fossil fuels has increased to a greater extent. Carbon dioxide (CO2) a major greenhouse gas isa by-product of such combustion practices. LÄS MER

  4. 3. Ferroelectricity in nanocrystalline Hf0.5Zr0.5O2 thin films

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Lun Sang; [2018]
    Nyckelord :ferroelectricity; Hf0.5Zr0.5O2; GIXRD; XRR; Technology and Engineering; Physics and Astronomy;

    Sammanfattning : Hafnium dioxide (HfO_2) based thin films doped with various dopants (Si, Ge, Al, Gd, Sr, Zr) have been found to exhibit ferroelectricity. These dopants were found to stabilize the III orthorhombic phase in the hafnium oxide based thin films. LÄS MER

  5. 4. Growth and characterization of HfON thin films with the crystal structures of HfO2

    Master-uppsats, Plasma och beläggningsfysik

    Författare :Bo Lü; [2011]
    Nyckelord :hafnium dioxide; thin films; gate dielectric; nitrogen incorporation; dielectric constant; crystal structure; HIPIMS; magnetron sputtering;

    Sammanfattning : HfO2 is a popular replacement for SiO2 in modern CMOS technology. It is used as the gate dielectric layer isolating the transistor channel from the gate. LÄS MER