Sökning: "GaN-on-SiC"

Hittade 2 uppsatser innehållade ordet GaN-on-SiC.

1. 1. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

   Master-uppsats, KTH/Tillämpad fysik

   Författare :Wilhelm Holmberg; [2023]
   Nyckelord :High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

   Sammanfattning : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. LÄS MER

3. 2. Optimization of gas flow uniformity in enhancement of Metal Organic Chemical Vapor Deposition growth for III-nitrides

   Master-uppsats, Linköpings universitet/Halvledarmaterial

   Författare :Kevin Olsson; [2019]
   Nyckelord :material science; mocvd; gan; semiconductors; gallium; nitride; fluid dynamics; termoelements; thermocouple; injector; heat transfer; thermal distribution; graphite; HEMT; III-nitrides; hot-wall MOCVD system; GaN-on-SiC; gas flow profile; laminar flow;

   Sammanfattning : The thesis focuses on the gas flow profile optimization of a non-conventional injector in a hot-wall MOCVD system. The injector’s gas flow profile is simulated with CFD and demonstrates awell-behaved laminar flow with a parabolic profile. LÄS MER