Sökning: "Nanowire MOSFET"

Visar resultat 6 - 10 av 14 uppsatser innehållade orden Nanowire MOSFET.

  1. 6. III-V Nanowire MOSFETs for mm-Wave Switch Applications

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Marcus Sandberg; [2020]
    Nyckelord :III-V Nanowire MOSFET; millimeter wave mmW ; millimeter-wave integrated circuit MMIC ; single-pole double-throw SPDT ; Technology and Engineering;

    Sammanfattning : RF-switches are key components in many electronic devices as they enable routing of higher frequency signals. Increasing demands on device performance requires new technologies as well as new approaches to designs of circuits. III-V nanowire MOSFETs are a promising device technology well suited for implementation of switches. LÄS MER

  3. 7. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Azal Alothmani; [2018]
    Nyckelord :Nanowire transistor; 1-D MOSFET; RF performance; permittivity; parasitic capacitance; HSQ; COMSOL Multiphysics; Technology and Engineering;

    Sammanfattning : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. LÄS MER

  4. 8. Development of III-V RF Nanowire MOSFETs

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Josefine Rost; Anna Wagnström; [2018]
    Nyckelord :Nanowire MOSFET; RF; COMSOL Multiphysics; Semiconductor processing; III-V Materials; Technology and Engineering;

    Sammanfattning : The silicon MOSFET is one of the most important components used in modern electronics. The pursuit to continue fulfilling Moore’s law by scaling transistors to even smaller sizes have driven the development forward for CMOS technologies and new approaches have been necessary. LÄS MER

  5. 9. Low-Frequency Noise in InGaAs Nanowire MOSFETs

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Christian Mario Möhle; [2017]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : Low-frequency (LF) noise (1/f as well as random telegraph-signal (RTS) noise) measurements were performed on high-performance InGaAs nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs). 1/f noise measurements at room temperature (RT) show that the dominant noise mechanism is carrier number fluctuations. LÄS MER

  7. 10. Ballistic Modeling of Nanowire MOSFETs

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Lasse Nilsson Södergren; [2017]
    Nyckelord :NWFET; ballistic; nanowire; simulation; MOSFET; Technology and Engineering;

    Sammanfattning : .... LÄS MER