Sökning: "Fabrication"

Visar resultat 16 - 20 av 367 uppsatser innehållade ordet Fabrication.

  1. 16. Experimental studies of radiation damage in uranium nitride

    Master-uppsats, KTH/Fysik

    Författare :Maria Giamouridou; [2023]
    Nyckelord :uranium nitride nuclear fuel; advanced nuclear fuel; uranium nitride fabrication; uranium nitride characterisation; Spark Plasma Sintering; proton irradiation; irradiation damage; TANDEM accelerator; irradiation induced cracking; irradiation induced hardening; irradiation induced swelling; hydrogen implantation; dislocation loops; kärnbränsle av urannitrid; avancerat kärnbränsle; tillverkning av urannitrid; karakterisering av urannitrid; Spark Plasma Sintering; protonbestrålning; strålningsskador; TANDEM-accelerator; strålningsinducerad sprickbildning; strålningsinducerad härdning; strålningsinducerad svällning; väteimplantation; dislokationsloopar;

    Sammanfattning : The effect of proton (H+) irradiation on uranium mononitride (UN) and UN compositefuel with 10 at.% ZrN (UN10at%ZrN) was examined. Protons of 2 MeV with fluences of1E17, 1E18, 1E19 and 1E20 ions/cm2 were accelerated towards the fabricated samples in orderto investigate the evolution of the micro-structure. LÄS MER

  3. 17. Using Approximate Computing Circuits to Optimize Power of an ASIC

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Padmashree Nuggehalli Srinivasa; Shi-Tien Hsing; [2023]
    Nyckelord :ASIC; Power; Optimization; Approximate Arithmetic Circuits; Approximate Computing; Technology; Technology and Engineering;

    Sammanfattning : The growing demand for network cameras to support real-time image processing and machine-learning applications has created a need for low-power solutions. Although technology scaling makes complex computations feasible, voltage scaling is limited, leading to higher power density and dark silicon problems. LÄS MER

  4. 18. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Elaheh Aghajafari; [2023]
    Nyckelord :III-V semiconductor; GaAsxP1-x heteroeputaxy; hydride vapor phase epitaxy; III-V Si solar cell; III-V halvledare; GaAsxP1-x epitaxiallager; hydridångfasepitaxi; III-V Si solcell;

    Sammanfattning : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. LÄS MER

  5. 19. Exploring the Possibilities of Sheet Metal Forming Via Plastic-Based Additive Manufacturing Moulding

    Master-uppsats, KTH/Produktionsutveckling

    Författare :Jemal Idris Ismail; Kafeel Olanrewaju Sanni; [2023]
    Nyckelord :: Sheet metal formation; Additive manufacturing; mass customization; personalized production; die design; die system; FDM; DOE; FEA; product development; automotive; sustainability; cost effective; metal dies; plastic dies.; Plåtformning; Additiv tillverkning; massanpassning; personlig produktion; formdesign; formsystem; FDM; DOE; FEA; produktutveckling; fordonsindustri; hållbarhet; kostnadseffektiv; metallformar; plastformar.;

    Sammanfattning : Additive Manufacturing (AM) has freeform fabrication capabilities of complex geometries directly from feedstock material. This can potentially enhance the efficient use of material and the cost effectiveness. It also offers design flexibility, and it is versatile. LÄS MER

  7. 20. Developing an Ar milling process to improve the contact quality to InAs nanowires

    Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Chris Mkolongo; [2023]
    Nyckelord :InAs nanowires; Argon milling; Technology and Engineering;

    Sammanfattning : The aim of this work was to develop a stable and reproducible argon milling process for InAs nanowires to remove the native oxide layer that increases electrical resistance. This was done by identifying a few milling parameters and studying them in relation to the milling rate of silicon dioxide (SiO2). LÄS MER